Recrystallized Silicon Carbide

Recrystallized Silicon Carbide

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The production of RSiC involves forming a green body—often through extrusion, pressing, or slip casting—using silicon carbide powder. This body is then sintered at high temperatures, typically above 2000°C, in a controlled atmosphere, often argon or vacuum. Unlike reaction-bonded or sintered SiC, recrystallized SiC undergoes grain growth during firing without the use of sintering aids. This results in a self-bonded structure with relatively high porosity, which can be advantageous in applications requiring permeability or thermal shock resistance.